IC DRAM 2GBIT PARALLEL 96FBGA Product overview: MT41J128M16JT-125:K from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT41J128M16JT-12
SDRAM - DDR3 Memory IC 2Gb (128M x 16) Parallel 800MHz 13.75ns 96-FBGA (8x14)
Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: SDRAM - DDR3
Memory Type: Volatile
Memory Size: 2Gb (128M x 16)
Access Time: 13.75ns
Family Name: MT41J128M16
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 95°C (TC)
Case / Package: 96-FBGA (8x14)
Supply Voltage - Operating: 1.425 V to 1.575 V
Memory Format: DRAM
Max Frequency: 800MHz
Alternative Parts (Cross-Reference): NT5CC128M16IP-DII; IS46TR16128A-125KBLA
Introduction Date: March 03, 2016
ECCN: EAR99
Country of Origin: China, Taiwan
Estimated EOL Date: 2025
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 36 pct.
Supply and Demand Status: Balance
IC DRAM 2GBIT PARALLEL 96FBGA
IC DRAM 2GBIT PARALLEL 96FBGA
DRAM, 128M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR3; DRAM Density:2Gbit; DRAM Memory Configuration:128M x 16bit; Clock Frequency:800MHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.5V; Access Time:1.25ns RoHS Compliant: Yes
DRAM, DDR3, 2GBIT, 0 TO 95DEG C ROHS COMPLIANT: YES
SDRAM - DDR3 Memory IC 2Gbit Parallel 800 MHz 13.75 ns 96-FBGA (8x14)
IC DRAM 2GBIT PARALLEL 96FBGA
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | ODG (Origin Data Global) | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT41J128M16JT-125:K | 557-MT41J128M16JT-125:K-ND | MT41J128M16JT-125:K | MT41J128M16JT-125:K | 80AH8004 | 91AH7948 | MT41J128M16JT-125:K | MT41J128M16JT-125:K | |
| Product Name | Memory IC and Storage Component | Memory | Memory - SDRAM - MT41J128M16JT-125:K | Memory | Integrated Circuits (ICs) - Memory - Memory | Dram, 128M X 16Bit, 0 To 95Deg C; Dram Type Micron | Dram, Ddr3, 2Gbit, 0 To 95Deg C Rohs Compliant Micron | Memory | Memory |
| Memory Category | Volatile; DRAM Chip | DRAM Chip | Volatile; DRAM Chip | SDRAM - DDR3; DRAM Chip | Volatile; DRAM Chip | DRAM Chip | DRAM Chip | DRAM; DRAM Chip | DRAM; DRAM Chip |
| Access Time | 13.75 ns | 13.75 ns | 13.75 ns | 1.25 ns | 13.75 ns | 13.75 ns | |||
| Operating Temperature | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | 0 to 95 C (32 to 203 F) | ||||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | |||
| Number of Words | 16000 k |
