Micron Technology, Inc. Memory MT40A512M16TB-062E:R

Description
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13)
Request a Quote Datasheet
Description
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13)
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - 557-MT40A512M16TB-062E:R-ND - DigiKey
Thief River Falls, MN, United States
SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13)

SDRAM - DDR4 Memory IC 8Gb (512M x 16) Parallel 1.6GHz 19ns 96-FBGA (7.5x13)

Buy Now Datasheet
Memory IC and Storage Component - 774-MT40A512M16TB-062E:R - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT40A512M16TB-062E:R
Memory IC and Storage Component 774-MT40A512M16TB-062E:R
IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16TB-062E:R from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16TB-06 2E:R can be used for catalog matching and distributor lookup.

IC DRAM 8GBIT PARALLEL 96FBGA Product overview: MT40A512M16TB-062E:R from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT40A512M16TB-062E:R can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
Memory - DDR - MT40A512M16TB-062E:R -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - DDR - MT40A512M16TB-062E:R
Memory - DDR - MT40A512M16TB-062E:R
Series: * Categories: Memory

Series: *
Categories: Memory

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MOD DRAM 8GBIT PARALLEL 96FBGA

MOD DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site
MOD DRAM 8GBIT PARALLEL 96FBGA

MOD DRAM 8GBIT PARALLEL 96FBGA

Supplier's Site Datasheet
Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron - 23AJ1300 - Newark, An Avnet Company
Chicago, IL, United States
Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron
23AJ1300
Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron 23AJ1300
DRAM, 512M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

DRAM, 512M X 16BIT, 0 TO 95DEG C; DRAM Type:DDR4; DRAM Density:8Gbit; DRAM Memory Configuration:512M x 16bit; Clock Frequency:1.6GHz; Memory Case Style:FBGA; No. of Pins:96Pins; Supply Voltage Nom:1.2V; Access Time:625ps RoHS Compliant: Yes

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - DDR SDRAM - MT40A512M16TB-062E:R - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - DDR SDRAM
MT40A512M16TB-062E:R
Integrated Circuits (ICs) - Memory - DDR SDRAM MT40A512M16TB-062E:R
Integrated Circuits (ICs) - Memory - DDR SDRAM

Integrated Circuits (ICs) - Memory - DDR SDRAM

Supplier's Site
Memory - MT40A512M16TB-062E:R - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13)

SDRAM - DDR4 Memory IC 8Gbit Parallel 1.6 GHz 19 ns 96-FBGA (7.5x13)

Buy Now

Technical Specifications

  DigiKey ERSAELECTRONICS PTE. LTD. Win Source Electronics ODG (Origin Data Global) Lingto Electronic Limited Newark, An Avnet Company Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 557-MT40A512M16TB-062E:R-ND 774-MT40A512M16TB-062E:R MT40A512M16TB-062E:R MT40A512M16TB-062E:R 23AJ1300 MT40A512M16TB-062E:R MT40A512M16TB-062E:R
Product Name Memory Memory IC and Storage Component Memory - DDR - MT40A512M16TB-062E:R Memory Memory Dram, 512M X 16Bit, 0 To 95Deg C; Dram Type Micron Integrated Circuits (ICs) - Memory - DDR SDRAM Memory
Memory Category DRAM Chip Volatile; DRAM Chip SDRAM - DDR4; DRAM Chip DRAM; DRAM Chip DRAM Chip DRAM; DRAM Chip
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
Package Type 96-TFBGA BGA; Bulk 96-TFBGA FBGA BGA; 96-TFBGA
Supply Voltage 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V 1.14V ~ 1.26V
Access Time 19 ns 19 ns 19 ns 0.6250 ns 19 ns
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