Micron Technology, Inc. Memory MT40A1G4SA-062E:G

Description
IC FLASH 16GBIT PARALLEL FBGA
Datasheet
Description
IC FLASH 16GBIT PARALLEL FBGA
Datasheet

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Company
Product
Description
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IC FLASH 16GBIT PARALLEL FBGA

IC FLASH 16GBIT PARALLEL FBGA

Supplier's Site Datasheet
Memory - MT40A1G4SA-062E:G - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 19 ns 78-FBGA (7.5x11)

SDRAM - DDR4 Memory IC 4Gbit Parallel 1.6 GHz 19 ns 78-FBGA (7.5x11)

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Integrated Circuits (ICs) - Memory - MT40A1G4SA-062E:G - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT40A1G4SA-062E:G
Integrated Circuits (ICs) - Memory MT40A1G4SA-062E:G
IC FLASH 16GBIT PARALLEL FBGA

IC FLASH 16GBIT PARALLEL FBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT40A1G4SA-062E:G MT40A1G4SA-062E:G MT40A1G4SA-062E:G
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category DRAM; DRAM Chip DRAM; DRAM Chip Volatile; DRAM Chip
Access Time 19 ns 19 ns 19 ns
Density 4000000 kbits 4000000 kbits 4000000 kbits
Operating Temperature 0 to 95 C (32 to 203 F) 0 to 95 C (32 to 203 F)
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