Micron Technology, Inc. Memory MT29F768G08EECBBJ4-37:B TR

Description
FLASH - NAND Memory IC 768Gbit Parallel 267 MHz 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 768Gbit Parallel 267 MHz 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 768Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 768Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now
IC FLASH 768GBIT PAR 132VBGA

IC FLASH 768GBIT PAR 132VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F768G08EECBBJ4-37:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F768G08EECBBJ4-37:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F768G08EECBBJ4-37:B TR
IC FLASH 768GBIT PAR 132VBGA

IC FLASH 768GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F768G08EECBBJ4-37:B TR MT29F768G08EECBBJ4-37:B TR MT29F768G08EECBBJ4-37:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F)
Density 768000000 kbits 768000000 kbits 768000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - MT42C4256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category NVRAM; VRAM
Access Time 100 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 591289-004-00 - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - 5962-8858702XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 4 kbits
View Details