Micron Technology, Inc. Memory MT29F64G08CBCABH1-10Z:A TR

Description
FLASH - NAND Memory IC 64Gbit Parallel 100 MHz 100-VBGA (12x18)
Description
FLASH - NAND Memory IC 64Gbit Parallel 100 MHz 100-VBGA (12x18)

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FLASH - NAND Memory IC 64Gbit Parallel 100 MHz 100-VBGA (12x18)

FLASH - NAND Memory IC 64Gbit Parallel 100 MHz 100-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F64G08CBCABH1-10Z:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F64G08CBCABH1-10Z:A TR
Integrated Circuits (ICs) - Memory - Memory MT29F64G08CBCABH1-10Z:A TR
IC FLASH 64GBIT PARALLEL 100VBGA

IC FLASH 64GBIT PARALLEL 100VBGA

Supplier's Site
IC FLASH 64GBIT PARALLEL 100VBGA

IC FLASH 64GBIT PARALLEL 100VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F64G08CBCABH1-10Z:A TR MT29F64G08CBCABH1-10Z:A TR MT29F64G08CBCABH1-10Z:A TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Density 64000000 kbits 64000000 kbits 64000000 kbits
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