Micron Technology, Inc. IT infrastructure Memory MT29F512G08EMCBBJ5-6:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
  • IT infrastructure Memory - Win Source Electronics
    Win Source Electronics
  • Memory - MT29F512G08EMCBBJ5-6:B - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F512G08EMCBBJ5-6:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
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Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

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Memory - MT29F512G08EMCBBJ5-6:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08EMCBBJ5-6:B
Memory MT29F512G08EMCBBJ5-6:B
IC FLASH 512GBIT PARALLEL 167MHZ

IC FLASH 512GBIT PARALLEL 167MHZ

Supplier's Site Datasheet
Memory - MT29F512G08EMCBBJ5-6:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08EMCBBJ5-6:B
Memory MT29F512G08EMCBBJ5-6:B
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 167 MHz 132-TBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 167 MHz 132-TBGA (12x18)

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Technical Specifications

  Win Source Electronics Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08EMCBBJ5-6:B MT29F512G08EMCBBJ5-6:B
Product Name IT infrastructure Memory Memory Memory
Memory Category Flash Flash; Flash Flash; FLASH
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