Micron Technology, Inc. IT infrastructure Memory MT29F512G08EMCBBJ5-6:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
  • IT infrastructure Memory - Win Source Electronics
    Win Source Electronics
  • Memory - MT29F512G08EMCBBJ5-6:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F512G08EMCBBJ5-6:B - Lingto Electronic Limited
    Lingto Electronic Limited
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Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

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Memory - MT29F512G08EMCBBJ5-6:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08EMCBBJ5-6:B
Memory MT29F512G08EMCBBJ5-6:B
FLASH - NAND (TLC) Memory IC 512Gbit Parallel 167 MHz 132-TBGA (12x18)

FLASH - NAND (TLC) Memory IC 512Gbit Parallel 167 MHz 132-TBGA (12x18)

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Memory - MT29F512G08EMCBBJ5-6:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08EMCBBJ5-6:B
Memory MT29F512G08EMCBBJ5-6:B
IC FLASH 512GBIT PARALLEL 167MHZ

IC FLASH 512GBIT PARALLEL 167MHZ

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08EMCBBJ5-6:B MT29F512G08EMCBBJ5-6:B
Product Name IT infrastructure Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
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