Micron Technology, Inc. IT infrastructure Memory MT29F512G08CFCBBWP-10M:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet
Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory -  - Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

Buy Now
IC FLASH 512GBIT PAR 48TSOP I

IC FLASH 512GBIT PAR 48TSOP I

Supplier's Site Datasheet
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 100 MHz 48-TSOP I

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 100 MHz 48-TSOP I

Buy Now

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CFCBBWP-10M:B MT29F512G08CFCBBWP-10M:B
Product Name IT infrastructure Memory Memory Memory
Memory Category Flash Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - Controllers - DP8421ATVX-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 68-LCC (J-Lead)
View Details
2 suppliers
Memory - 24C01-I/P - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Memory - IS29GL01GS-11DHB010 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers