Micron Technology, Inc. IT infrastructure Memory MT29F512G08CFCBBWP-10M:B

Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
  • IT infrastructure Memory - Win Source Electronics
    Win Source Electronics
  • Memory - MT29F512G08CFCBBWP-10M:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F512G08CFCBBWP-10M:B - Lingto Electronic Limited
    Lingto Electronic Limited
Request a Quote Datasheet
Description
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
IT infrastructure Memory - - Win Source Electronics
Win Source Electronics
Laguna Hills, CA, United States
IT infrastructure Memory
IT infrastructure Memory
Category: IT infrastructure Memory Manufacturer: Micron Technology Inc.

Category: IT infrastructure Memory
Manufacturer: Micron Technology Inc.

Buy Now
Memory - MT29F512G08CFCBBWP-10M:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F512G08CFCBBWP-10M:B
Memory MT29F512G08CFCBBWP-10M:B
FLASH - NAND (MLC) Memory IC 512Gbit Parallel 100 MHz 48-TSOP I

FLASH - NAND (MLC) Memory IC 512Gbit Parallel 100 MHz 48-TSOP I

Buy Now
Memory - MT29F512G08CFCBBWP-10M:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F512G08CFCBBWP-10M:B
Memory MT29F512G08CFCBBWP-10M:B
IC FLASH 512GBIT PAR 48TSOP I

IC FLASH 512GBIT PAR 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F512G08CFCBBWP-10M:B MT29F512G08CFCBBWP-10M:B
Product Name IT infrastructure Memory Memory Memory
Memory Category Flash Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882635 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882635
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
CD74HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register - CD74HC40105M96E4 - Texas Instruments
Texas Instruments
CD74HC40105 High Speed CMOS Logic 4-Bit by 16-Word FIFO Register
CD74HC40105M96E4
Specs
Memory Category FIFO
View Details
Quad Memory IC and Storage Component - 774-S25FL116K0XMFA040 - ERSAELECTRONICS PTE. LTD.
Infineon Technologies AG
Quad Memory IC and Storage Component
S25FL116K0XMFA040
Specs
Memory Category Flash; Non-Volatile
Cycle Time 3.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
Memory - SMJ418160 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ418160
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 80 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details