Infineon Technologies AG Memory IS29GL512S-11TFV023

Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
  • Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS29GL512S-11TFV023 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS29GL512S-11TFV023
Memory IS29GL512S-11TFV023
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now
Memory - IS29GL512S-11TFV023 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS29GL512S-11TFV023
Memory IS29GL512S-11TFV023
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11TFV023 IS29GL512S-11TFV023
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44C256
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 593995-005-69 - Lingto Electronic Limited
Infineon Technologies AG
Memory
593995-005-69
View Details
2 suppliers
Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882526
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - S25FL129P0XBHI300A - Lingto Electronic Limited
Rochester Electronics
Memory
S25FL129P0XBHI300A
Specs
Memory Category Flash; Flash
Density 128000 kbits
View Details