Infineon Technologies AG Memory IS29GL512S-11TFV023

Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11TFV023 IS29GL512S-11TFV023
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

SN74ACT2226 64 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2226DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - A5140970Y0500AA - Lingto Electronic Limited
Infineon Technologies AG
View Details
2 suppliers
Memory - AS4DDR232M64 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR2
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 256000 kbits
View Details
Memory - 27C16Q45/B - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EPROM; EPROM
Access Time 450 ns
Density 16 kbits
View Details
2 suppliers