Infineon Technologies AG Memory IS29GL512S-11TFV023

Description
IC FLASH 512MBIT PARALLEL 56TSOP
  • Memory - IS29GL512S-11TFV023 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 512MBIT PARALLEL 56TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL512S-11TFV023 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS29GL512S-11TFV023
Memory IS29GL512S-11TFV023
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS29GL512S-11TFV023
Memory IS29GL512S-11TFV023
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

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Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11TFV023 IS29GL512S-11TFV023
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Access Time 110 ns 110 ns
Density 512000 kbits 512000 kbits
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