Infineon Technologies AG Memory IS29GL512S-11TFV023

Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
  • Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - IS29GL512S-11TFV023 - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - IS29GL512S-11TFV023 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
IS29GL512S-11TFV023
Memory IS29GL512S-11TFV023
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

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Memory - IS29GL512S-11TFV023 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
IS29GL512S-11TFV023
Memory IS29GL512S-11TFV023
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number IS29GL512S-11TFV023 IS29GL512S-11TFV023
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 110 ns 110 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
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