Micron Technology, Inc. Memory - Flash - MT29F4G08ABBEAH4-IT:E TR MT29F4G08ABBEAH4-IT:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote
Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance
Request a Quote

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F4G08ABBEAH4-IT:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F4G08ABBEAH4-IT:E TR
Memory - Flash - MT29F4G08ABBEAH4-IT:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 4Gb (512M x 8) Categories: Integrated Circuits Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 63-VFBGA (9x11) Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 53 pct. Supply and Demand Status: Balance

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Categories: Integrated Circuits
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 53 pct.
Supply and Demand Status: Balance

Buy Now
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F4G08ABBEAH4-IT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F4G08ABBEAH4-IT:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F4G08ABBEAH4-IT:E TR
IC FLASH 4GBIT PARALLEL 63VFBGA

IC FLASH 4GBIT PARALLEL 63VFBGA

Supplier's Site
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)

Buy Now

Technical Specifications

  Win Source Electronics Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F4G08ABBEAH4-IT:E TR MT29F4G08ABBEAH4-IT:E TR MT29F4G08ABBEAH4-IT:E TR
Product Name Memory - Flash - MT29F4G08ABBEAH4-IT:E TR Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882526 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Bits per Word 8 bits
Package Type SOIC
View Details
Memory - AS4SD16M16 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SDRAM; DRAM Chip
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 128000 kbits
View Details