IC FLASH 4GBIT PARALLEL 63VFBGA Product overview: MT29F4G08ABBDAH4-IT:
FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)
FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)
FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)
Category: Integrated Circuits (ICs)>Memory
Package: Tape & Reel
Standard Package: 1,000
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 4Gb (512M x 8)
Voltage - Supply: 1.7V ~ 1.95V
Package / Case: 63-VFBGA
Supplier Device Package: 63-VFBGA (9x11)
Temperature Range - Operating: -40°C ~ 85°C (TA)
Memory Format: FLASH
Memory Interface: Parallel
ECCN: 3A991B1A
Fake Threat In the Open Market: 53 pct.
MSL Level: 3 (168 Hours)
REACH Status: REACH Unaffected
HTSUS: 8542.32.0071
Mfr: Micron Technology Inc.
Base Product Number: MT29F4G08
IC FLASH 4GBIT PARALLEL 63VFBGA
IC FLASH 4GBIT PARALLEL 63VFBGA
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)
| ERSAELECTRONICS PTE. LTD. | DigiKey | Win Source Electronics | Lingto Electronic Limited | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT29F4G08ABBDAH4-IT:D TR | 557-1873-6-ND | MT29F4G08ABBDAH4-IT:D TR | MT29F4G08ABBDAH4-IT:D TR | MT29F4G08ABBDAH4-IT:D TR | |
| Product Name | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory |
| Memory Category | Flash; Non-Volatile | Flash | Flash; Non-Volatile | Flash; Flash | Flash; Non-Volatile | Flash; FLASH |
| Endurance | 100000 Write/Erase Cycles | |||||
| Operating Temperature | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | -40 to 85 C (-40 to 185 F) | ||
| Density | 4000000 kbits | 4000000 kbits | 4000000 kbits | 4000000 kbits | ||
| Number of Words | 512000 k |