FLASH - NAND Memory IC 4Gb (512M x 8) Parallel 63-VFBGA (9x11)
Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 4Gb (512M x 8)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 63-VFBGA (9x11)
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 41 pct.
Supply and Demand Status: Limited
IC FLASH 4GBIT PARALLEL 63VFBGA Product overview: MT29F4G08ABBDAH4:D from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F4G08ABBDAH4
FLASH - NAND Memory IC 4Gbit Parallel 63-VFBGA (9x11)
IC FLASH 4GBIT PARALLEL 63VFBGA
IC FLASH 4GBIT PARALLEL 63VFBGA
FLASH MEMORY, 4GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:4Gbit; Flash Memory Configuration:512M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:- RoHS Compliant: Yes
FLASH MEMORY, 4GBIT, 0 TO 70DEG C ROHS COMPLIANT: YES
IC FLASH 4GBIT PARALLEL 63VFBGA
| DigiKey | Win Source Electronics | ERSAELECTRONICS PTE. LTD. | Quarktwin Technology Ltd. | ODG (Origin Data Global) | Lingto Electronic Limited | Newark, An Avnet Company | Newark, An Avnet Company | Shenzhen Shengyu Electronics Technology Limited | |
|---|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT29F4G08ABBDAH4:D-ND | 774-MT29F4G08ABBDAH4:D | MT29F4G08ABBDAH4:D | MT29F4G08ABBDAH4:D | MT29F4G08ABBDAH4:D | 80AH7791 | 51AK1339 | MT29F4G08ABBDAH4:D | |
| Product Name | Memory | Memory - Flash - MT29F4G08ABBDAH4:D | Memory IC and Storage Component | Memory | Memory | Memory | Flash Memory, 4Gbit, 0 To 70Deg C; Flash Memory Type Micron | Flash Memory, 4Gbit, 0 To 70Deg C Rohs Compliant Micron | Integrated Circuits (ICs) - Memory - Memory |
| Memory Category | Flash | Flash; FLASH | Flash; Non-Volatile | Flash; FLASH | Flash; FLASH - NAND | Flash; Flash | Flash | Flash | Flash; Non-Volatile |
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||||
| Package Type | 63-VFBGA | BGA; 63-VFBGA (9x11) | BGA; Bulk | BGA; 63-VFBGA | 63-VFBGA | VFBGA | |||
| Supply Voltage | 1.7V ~ 1.95V | 1.7 V ~ 1.95 V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 1.7V ~ 1.95V | 63-VFBGA | |||
| Endurance | 100000 Write/Erase Cycles |
