Micron Technology, Inc. Memory MT29F3T08EUHBBM4-3RES:B TR

Description
IC FLASH 3TB PARALLEL 333MHZ
Description
IC FLASH 3TB PARALLEL 333MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 3TB PARALLEL 333MHZ

IC FLASH 3TB PARALLEL 333MHZ

Supplier's Site
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EUHBBM4-3RES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EUHBBM4-3RES:B TR
IC FLASH 3TBIT PARALLEL 333MHZ

IC FLASH 3TBIT PARALLEL 333MHZ

Supplier's Site
FLASH - NAND Memory IC 3Tbit Parallel 333 MHz

FLASH - NAND Memory IC 3Tbit Parallel 333 MHz

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EUHBBM4-3RES:B TR MT29F3T08EUHBBM4-3RES:B TR MT29F3T08EUHBBM4-3RES:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8F2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 90 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 9021931 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers