Micron Technology, Inc. Memory MT29F3T08EUCBBM4-37:B TR

Description
IC FLASH 3TB PARALLEL 267MHZ
Description
IC FLASH 3TB PARALLEL 267MHZ

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 3TB PARALLEL 267MHZ

IC FLASH 3TB PARALLEL 267MHZ

Supplier's Site
FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

FLASH - NAND Memory IC 3Tbit Parallel 267 MHz

Buy Now
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F3T08EUCBBM4-37:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F3T08EUCBBM4-37:B TR
IC FLASH 3TBIT PARALLEL 267MHZ

IC FLASH 3TBIT PARALLEL 267MHZ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F3T08EUCBBM4-37:B TR MT29F3T08EUCBBM4-37:B TR MT29F3T08EUCBBM4-37:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 24C02A-E/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 3500 ns
Density 2 kbits
View Details
Memory - MYX6M4424 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category MOSFET
Operating Temperature -55 to 125 C (-67 to 257 F)
Package Type CDIP-8LD
View Details
SN74ACT2229 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2229DWR - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Flash Memory - 1712220 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Pins 8
Supply Voltage 3.6 v, 2.7 v
View Details