Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F2T08EMHAFJ4-3T:A TR

Description
IC FLASH 2TBIT PARALLEL 132VBGA
Description
IC FLASH 2TBIT PARALLEL 132VBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F2T08EMHAFJ4-3T:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2T08EMHAFJ4-3T:A TR
Integrated Circuits (ICs) - Memory - Memory MT29F2T08EMHAFJ4-3T:A TR
IC FLASH 2TBIT PARALLEL 132VBGA

IC FLASH 2TBIT PARALLEL 132VBGA

Supplier's Site
IC FLASH 2TB PARALLEL 132VBGA

IC FLASH 2TB PARALLEL 132VBGA

Supplier's Site
FLASH - NAND Memory IC 2Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 2Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F2T08EMHAFJ4-3T:A TR MT29F2T08EMHAFJ4-3T:A TR MT29F2T08EMHAFJ4-3T:A TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Data Rate 333 MHz
Density 2000000000 kbits 2000000000 kbits 2000000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS29LV016J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 50 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 24C01-I - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details
Quad Memory IC and Storage Component - 774-S25FL064LABNFB040 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
5 suppliers