Micron Technology, Inc. Memory - Flash - MT29F2G08ABDWP:D MT29F2G08ABDWP:D

Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet
Description
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F2G08ABDWP:D -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F2G08ABDWP:D
Memory - Flash - MT29F2G08ABDWP:D
Manufacturer: Micron Technology Inc. Packaging: Tray Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 2Gb (256M x 8) Categories: Integrated Circuits Status: Obsolete(EOL) Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP I Supply Voltage - Operating: 1.7 V to 1.95 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 70 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Tray
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 2Gb (256M x 8)
Categories: Integrated Circuits
Status: Obsolete(EOL)
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP I
Supply Voltage - Operating: 1.7 V to 1.95 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 70 pct.
Supply and Demand Status: Limited

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08ABDWP:D - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08ABDWP:D
Integrated Circuits (ICs) - Memory - Memory MT29F2G08ABDWP:D
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site
Memory - MT29F2G08ABDWP:D - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 2Gbit Parallel 48-TSOP I

Buy Now
IC FLASH 2GBIT PARALLEL 48TSOP I

IC FLASH 2GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number MT29F2G08ABDWP:D MT29F2G08ABDWP:D MT29F2G08ABDWP:D
Product Name Memory - Flash - MT29F2G08ABDWP:D Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 448-S25FL128LAGMFB003DKR-ND - DigiKey
Infineon Technologies AG
Specs
Memory Category Flash
Operating Temperature -40 to 105 C (-40 to 221 F)
Density 128000 kbits
View Details
4 suppliers
Memory - AS8ER128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 250 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details