Micron Technology, Inc. Memory - Flash - MT29F2G08ABAEAH4:E MT29F2G08ABAEAH4:E

Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 2Gb (256M x 8) Family Name: MT29F2G08ABAEAH4 Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Alternative Parts (Cross-Reference): K9F2G08U0A-JIB0; K9F2G08U0A-JCB0; MT29F2G08ABAEAH4:E TR; MT29F2G08ABAEAH4-IT: E; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Malaysia, Singapore Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Family Part Number: MT29F2G08 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V
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Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 2Gb (256M x 8) Family Name: MT29F2G08ABAEAH4 Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Alternative Parts (Cross-Reference): K9F2G08U0A-JIB0; K9F2G08U0A-JCB0; MT29F2G08ABAEAH4:E TR; MT29F2G08ABAEAH4-IT: E; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Malaysia, Singapore Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Family Part Number: MT29F2G08 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F2G08ABAEAH4:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F2G08ABAEAH4:E
Memory - Flash - MT29F2G08ABAEAH4:E
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting Style: SMD Technology: FLASH - NAND Memory Type: Non-Volatile Memory Size: 2Gb (256M x 8) Family Name: MT29F2G08ABAEAH4 Categories: Integrated Circuits Supplier Device Package: 63-VFBGA (9x11) Temperature Range - Operating: 0°C ~ 70°C Memory Format: FLASH Memory Interface: Parallel Manufacturer Package: 63-VFBGA Alternative Parts (Cross-Reference): K9F2G08U0A-JIB0; K9F2G08U0A-JCB0; MT29F2G08ABAEAH4:E TR; MT29F2G08ABAEAH4-IT: E; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Malaysia, Singapore Estimated EOL Date: 2027 Halogen Free: Compliant Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 57 pct. Supply and Demand Status: Balance Family Part Number: MT29F2G08 Manufacturer Pack Quantity: 1,260 MSL Level: 3 (168 Hours) Supply Voltage (V): 2.7V ~ 3.6V

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 2Gb (256M x 8)
Family Name: MT29F2G08ABAEAH4
Categories: Integrated Circuits
Supplier Device Package: 63-VFBGA (9x11)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: FLASH
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA
Alternative Parts (Cross-Reference): K9F2G08U0A-JIB0; K9F2G08U0A-JCB0; MT29F2G08ABAEAH4:E TR; MT29F2G08ABAEAH4-IT:E;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Malaysia, Singapore
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Family Part Number: MT29F2G08
Manufacturer Pack Quantity: 1,260
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V

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Memory IC and Storage Component - 774-MT29F2G08ABAEAH4:E - ERSAELECTRONICS PTE. LTD.
Singapore, Singapore
Memory IC and Storage Component
774-MT29F2G08ABAEAH4:E
Memory IC and Storage Component 774-MT29F2G08ABAEAH4:E
IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G08ABAEAH4:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08ABAEAH4 :E can be used for catalog matching and distributor lookup.

IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G08ABAEAH4:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08ABAEAH4:E can be used for catalog matching and distributor lookup.

Supplier's Site
Flash Memory, 2Gbit, 0 To 70Deg C; Flash Memory Type Micron - 80AH7712 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 2Gbit, 0 To 70Deg C; Flash Memory Type Micron
80AH7712
Flash Memory, 2Gbit, 0 To 70Deg C; Flash Memory Type Micron 80AH7712
FLASH MEMORY, 2GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:2Gbit; Flash Memory Configuration:256M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:- RoHS Compliant: Yes

FLASH MEMORY, 2GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:2Gbit; Flash Memory Configuration:256M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:- RoHS Compliant: Yes

Supplier's Site Datasheet
Flash Memory, 2Gbit, 0 To 70Deg C Rohs Compliant Micron - 51AK3644 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 2Gbit, 0 To 70Deg C Rohs Compliant Micron
51AK3644
Flash Memory, 2Gbit, 0 To 70Deg C Rohs Compliant Micron 51AK3644
FLASH MEMORY, 2GBIT, 0 TO 70DEG C ROHS COMPLIANT: YES

FLASH MEMORY, 2GBIT, 0 TO 70DEG C ROHS COMPLIANT: YES

Supplier's Site
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F2G08ABAEAH4:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F2G08ABAEAH4:E
Integrated Circuits (ICs) - Memory - Memory MT29F2G08ABAEAH4:E
IC FLASH 2GBIT PARALLEL 63VFBGA

IC FLASH 2GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - MT29F2G08ABAEAH4:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)

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Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Newark, An Avnet Company Newark, An Avnet Company ODG (Origin Data Global) Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F2G08ABAEAH4:E 80AH7712 51AK3644 MT29F2G08ABAEAH4:E MT29F2G08ABAEAH4:E MT29F2G08ABAEAH4:E MT29F2G08ABAEAH4:E
Product Name Memory - Flash - MT29F2G08ABAEAH4:E Memory IC and Storage Component Flash Memory, 2Gbit, 0 To 70Deg C; Flash Memory Type Micron Flash Memory, 2Gbit, 0 To 70Deg C Rohs Compliant Micron Memory Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; Non-Volatile Flash Flash Flash; FLASH - NAND Flash; Flash Flash; Non-Volatile Flash; FLASH
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Supply Voltage 2.7V ~ 3.6V -3.3V; 3.6V; 2.7V ~ 3.6V 2.7V ~ 3.6V Surface Mount 3.6V; 2.7V ~ 3.6V
Endurance 100000 Write/Erase Cycles
Density 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits 2000000 kbits
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