IC FLASH 2GBIT PARALLEL 63VFBGA Product overview: MT29F2G08ABAEAH4:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F2G08ABAEAH4
Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting Style: SMD
Technology: FLASH - NAND
Memory Type: Non-Volatile
Memory Size: 2Gb (256M x 8)
Family Name: MT29F2G08ABAEAH4
Categories: Integrated Circuits
Supplier Device Package: 63-VFBGA (9x11)
Temperature Range - Operating: 0°C ~ 70°C
Memory Format: FLASH
Memory Interface: Parallel
Manufacturer Package: 63-VFBGA
Alternative Parts (Cross-Reference): K9F2G08U0A-JIB0; K9F2G08U0A-JCB0; MT29F2G08ABAEAH4:E TR; MT29F2G08ABAEAH4-IT:
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Malaysia, Singapore
Estimated EOL Date: 2027
Halogen Free: Compliant
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 57 pct.
Supply and Demand Status: Balance
Family Part Number: MT29F2G08
Manufacturer Pack Quantity: 1,260
MSL Level: 3 (168 Hours)
Supply Voltage (V): 2.7V ~ 3.6V
IC FLASH 2GBIT PARALLEL 63VFBGA
IC FLASH 2GBIT PARALLEL 63VFBGA
FLASH - NAND Memory IC 2Gbit Parallel 63-VFBGA (9x11)
IC FLASH 2GBIT PARALLEL 63VFBGA
FLASH MEMORY, 2GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:2Gbit; Flash Memory Configuration:256M x 8bit; IC Interface Type:Parallel; Memory Case Style:VFBGA; No. of Pins:63Pins; Clock Frequency:50MHz; Access Time:- RoHS Compliant: Yes
FLASH MEMORY, 2GBIT, 0 TO 70DEG C ROHS COMPLIANT: YES
| ERSAELECTRONICS PTE. LTD. | Win Source Electronics | ODG (Origin Data Global) | Lingto Electronic Limited | Quarktwin Technology Ltd. | Shenzhen Shengyu Electronics Technology Limited | Newark, An Avnet Company | Newark, An Avnet Company | |
|---|---|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | 774-MT29F2G08ABAEAH4:E | MT29F2G08ABAEAH4:E | MT29F2G08ABAEAH4:E | MT29F2G08ABAEAH4:E | MT29F2G08ABAEAH4:E | 80AH7712 | 51AK3644 | |
| Product Name | Memory IC and Storage Component | Memory - Flash - MT29F2G08ABAEAH4:E | Memory | Memory | Memory | Integrated Circuits (ICs) - Memory - Memory | Flash Memory, 2Gbit, 0 To 70Deg C; Flash Memory Type Micron | Flash Memory, 2Gbit, 0 To 70Deg C Rohs Compliant Micron |
| Memory Category | Flash; Non-Volatile | Flash; Non-Volatile | Flash; FLASH - NAND | Flash; Flash | Flash; FLASH | Flash; Non-Volatile | Flash | Flash |
| Endurance | 100000 Write/Erase Cycles | |||||||
| Operating Temperature | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | 0 to 70 C (32 to 158 F) | ||||
| Density | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | 2000000 kbits | ||
| Number of Words | 256000 k |