Micron Technology, Inc. Memory MT29F256G08EFEBBWP:B

Description

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
MT29F256G08EFEBBWP:B

Memory MT29F256G08EFEBBWP:B

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

Buy Now

Lingto Electronic Limited

Shenzhen, China

Memory
MT29F256G08EFEBBWP:B

Memory MT29F256G08EFEBBWP:B

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	MT29F256G08EFEBBWP:B	MT29F256G08EFEBBWP:B
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash

Unlock Full Specs

to access all available technical data

Similar Products

RS Components, Ltd.

Flash Memory

1882567

Specs

Memory Category Flash

Access Time 25000 ns

Number of Words 1024 k

View Details

Texas Instruments

Logic - Logic - FIFOs Memory - SN74ACT7801-18FN

SN74ACT7801-18FN

View Details

Micross Components, Inc.

Memory

AS8SLC512K32PECA

Specs

Memory Category SRAM; SRAM Chip

Access Time 12 ns

Operating Temperature -55 to 125 C (-67 to 257 F)

View Details

Rochester Electronics

Memory

0418A4ACLAA-4H

Specs

Memory Category SRAM; SRAM Chip

Access Time 4.5 ns

Density 4000 kbits

View Details