Micron Technology, Inc. Memory MT29F256G08EFEBBWP:B

Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I
  • Memory - MT29F256G08EFEBBWP:B - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F256G08EFEBBWP:B - Lingto Electronic Limited
    Lingto Electronic Limited
Datasheet
Description
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F256G08EFEBBWP:B - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F256G08EFEBBWP:B
Memory MT29F256G08EFEBBWP:B
FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

FLASH - NAND (TLC) Memory IC 256Gbit Parallel 48-TSOP I

Buy Now
Memory - MT29F256G08EFEBBWP:B - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F256G08EFEBBWP:B
Memory MT29F256G08EFEBBWP:B
IC FLASH 256GBIT PAR 48TSOP I

IC FLASH 256GBIT PAR 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F256G08EFEBBWP:B MT29F256G08EFEBBWP:B
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Integrated Circuits (ICs) - Memory - Memory - JM38510/23113BFA - Acme Chip Technology Co., Limited
Texas Instruments
Integrated Circuits (ICs) - Memory - Memory
JM38510/23113BFA
View Details
2 suppliers
Memory - 0418A4ACLAA-4F - Lingto Electronic Limited
Rochester Electronics
Memory
0418A4ACLAA-4F
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.3 ns
Density 4000 kbits
View Details
Memory - 16-4099-01-T - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-4099-01-T
View Details
2 suppliers
Flash Memory - 1882568 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882568
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details