Micron Technology, Inc. Memory MT29F1T08GBLBEJ4:B TR

Description
FLASH - NAND Memory IC 1Tbit Parallel 132-VBGA (12x18)
Description
FLASH - NAND Memory IC 1Tbit Parallel 132-VBGA (12x18)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 1Tbit Parallel 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 132-VBGA (12x18)

Buy Now
QLC 1T 128GX8 VBGA

QLC 1T 128GX8 VBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - MT29F1T08GBLBEJ4:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory
MT29F1T08GBLBEJ4:B TR
Integrated Circuits (ICs) - Memory MT29F1T08GBLBEJ4:B TR
QLC 1T 128GX8 VBGA

QLC 1T 128GX8 VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08GBLBEJ4:B TR MT29F1T08GBLBEJ4:B TR MT29F1T08GBLBEJ4:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Logic - FIFOs Memory - 67C4013-15NL - Lingto Electronic Limited
Specs
Data Rate 15 MHz
Operating Current 45 mA
View Details
Controllers - DP8422ATVX-25 - Quarktwin Technology Ltd.
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type 84-LCC (J-Lead)
Supply Voltage 4.5V ~ 5.5V
View Details
2 suppliers
Quad Memory IC and Storage Component - 774-S25FL064LABMFB011 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
4 suppliers
Memory - AS58C1001 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 150 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details