Micron Technology, Inc. Memory MT29F1T08EMHAFJ4-3RES:A

Description
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)
Datasheet
Description
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F1T08EMHAFJ4-3RES:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T08EMHAFJ4-3RES:A
Integrated Circuits (ICs) - Memory - Memory MT29F1T08EMHAFJ4-3RES:A
IC FLASH 1TBIT PARALLEL 132VBGA

IC FLASH 1TBIT PARALLEL 132VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08EMHAFJ4-3RES:A MT29F1T08EMHAFJ4-3RES:A MT29F1T08EMHAFJ4-3RES:A
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Operating Temperature 0 to 70 C (32 to 158 F)
Density 1000000000 kbits 1000000000 kbits 1000000000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882565 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
CD40105B-MIL CMOS 4-Bit-by-16-Word FIFO Register - CD40105BF3A - Texas Instruments
Specs
Memory Category FIFO
Package Type CDIP,DIESALE
View Details
3 suppliers
Memory - AS5C1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 520366231296 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers