Micron Technology, Inc. Memory MT29F1T08EMHAFJ4-3RES:A

Description
IC FLASH 1TB PARALLEL 132VBGA
Datasheet
Description
IC FLASH 1TB PARALLEL 132VBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 132VBGA

IC FLASH 1TB PARALLEL 132VBGA

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - MT29F1T08EMHAFJ4-3RES:A - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T08EMHAFJ4-3RES:A
Integrated Circuits (ICs) - Memory - Memory MT29F1T08EMHAFJ4-3RES:A
IC FLASH 1TBIT PARALLEL 132VBGA

IC FLASH 1TBIT PARALLEL 132VBGA

Supplier's Site
FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 1Tbit Parallel 333 MHz 132-VBGA (12x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08EMHAFJ4-3RES:A MT29F1T08EMHAFJ4-3RES:A MT29F1T08EMHAFJ4-3RES:A
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Density 1000000000 kbits 1000000000 kbits 1000000000 kbits
Data Rate 333 MHz
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ27C512 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EPROM; UVEPROM
Access Time 15 to 25 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - EEPROM - 24C02-I/P - 854722-24C02-I/P - Win Source Electronics
Specs
Memory Category EEPROM
View Details
2 suppliers
SDRAM - 2420770P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details