Micron Technology, Inc. Memory MT29F1T08CPCBBH8-6R:B TR

Description
IC FLASH 1TB PARALLEL 152LBGA
Description
IC FLASH 1TB PARALLEL 152LBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1TB PARALLEL 152LBGA

IC FLASH 1TB PARALLEL 152LBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1T08CPCBBH8-6R:B TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1T08CPCBBH8-6R:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F1T08CPCBBH8-6R:B TR
IC FLASH 1TB PARALLEL 152LBGA

IC FLASH 1TB PARALLEL 152LBGA

Supplier's Site
FLASH - NAND Memory IC 1Tbit Parallel 167 MHz 152-LBGA (14x18)

FLASH - NAND Memory IC 1Tbit Parallel 167 MHz 152-LBGA (14x18)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1T08CPCBBH8-6R:B TR MT29F1T08CPCBBH8-6R:B TR MT29F1T08CPCBBH8-6R:B TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882561 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details
SMV512K32-SP 16MB Radiation-Hardened SRAM - 5962-1123701VXC - Texas Instruments
Specs
Memory Category SRAM Chip
Access Time 20 ns
Density 16000 kbits
View Details
3 suppliers
Memory - MT4C4001J - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 28C64A-20/J - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 200 ns
Density 64 kbits
View Details