Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F1HT08ELCBBG1-37:B TR

Description
IC FLASH 1.5TBIT PAR 272VBGA
Description
IC FLASH 1.5TBIT PAR 272VBGA

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1HT08ELCBBG1-37:B TR
Integrated Circuits (ICs) - Memory - Memory MT29F1HT08ELCBBG1-37:B TR
IC FLASH 1.5TBIT PAR 272VBGA

IC FLASH 1.5TBIT PAR 272VBGA

Supplier's Site
FLASH - NAND Memory IC 1.5Tbit Parallel 267 MHz 272-VBGA (14x18)

FLASH - NAND Memory IC 1.5Tbit Parallel 267 MHz 272-VBGA (14x18)

Buy Now
IC FLASH 1.5T PARALLEL 272VBGA

IC FLASH 1.5T PARALLEL 272VBGA

Supplier's Site

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1HT08ELCBBG1-37:B TR MT29F1HT08ELCBBG1-37:B TR MT29F1HT08ELCBBG1-37:B TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

SDRAM - 2420769 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 20 ns
Number of Words 128000 k
View Details
Memory IC and Storage Component - 736-DP8429D-70 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category DRAM Chip
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type Bulk
View Details
3 suppliers
Memory - IS29GL128S-10DHB01 - Quarktwin Technology Ltd.
Infineon Technologies AG
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers
Memory - MYX4DD3K512M64PBG2 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DDR3
Operating Temperature -55 to 125 C (-67 to 257 F)
Density 4096000 kbits
View Details