Micron Technology, Inc. Memory MT29F1G16ABCHC:C TR

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Description
IC FLASH 1GBIT PARALLEL 63VFBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
Memory - MT29F1G16ABCHC:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABCHC:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABCHC:C TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABCHC:C TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABCHC:C TR MT29F1G16ABCHC:C TR MT29F1G16ABCHC:C TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8SLC128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 5962-8670601LA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category PROM; PROM
Access Time 40 ns
Density 8 kbits
View Details
Flash Memory - 1882723P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 16000 kbits
Package Type USON
View Details