Micron Technology, Inc. Memory MT29F1G16ABCHC:C TR

Description
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)
Description
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F1G16ABCHC:C TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABCHC:C TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABCHC:C TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABCHC:C TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABCHC:C TR MT29F1G16ABCHC:C TR MT29F1G16ABCHC:C TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS5C1005 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 15 to 45 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Specs
Operating Temperature 0 to 115 C (32 to 239 F)
Package Type QFP; Tray
Supply Voltage 3.135V ~ 3.465V
View Details
Memory - 5962-8858702XA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 35 ns
Density 4 kbits
View Details
Memory - Controllers - NSBMC096VF-25 - Lingto Electronic Limited
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type QFP; 132-BQFP Bumpered
View Details
2 suppliers