Micron Technology, Inc. Memory MT29F1G16ABBEAMD-IT:E TR

Description
IC FLASH 1GBIT PARALLEL 130VFBGA
Description
IC FLASH 1GBIT PARALLEL 130VFBGA

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 1GBIT PARALLEL 130VFBGA

IC FLASH 1GBIT PARALLEL 130VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBEAMD-IT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBEAMD-IT:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAMD-IT:E TR
IC FLASH 1GBIT PARALLEL 130VFBGA

IC FLASH 1GBIT PARALLEL 130VFBGA

Supplier's Site
FLASH - NAND Memory IC 1Gbit Parallel 130-VFBGA (8x9)

FLASH - NAND Memory IC 1Gbit Parallel 130-VFBGA (8x9)

Buy Now

Technical Specifications

  Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABBEAMD-IT:E TR MT29F1G16ABBEAMD-IT:E TR MT29F1G16ABBEAMD-IT:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Flash Flash; Non-Volatile Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - IS29GL128S-10TFV010 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 100 ns
Density 128000 kbits
View Details
2 suppliers
Memory - SMJ4C1024 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 6116LA25SOG - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 25 ns
Density 16 kbits
View Details
Flash Memory - 1882554 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Access Time 25000 ns
Bits per Word 8 bits
View Details