Micron Technology, Inc. Memory MT29F1G16ABBEAHC:E TR

Description
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)
Description
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (10.5x13)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBEAHC:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBEAHC:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAHC:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABBEAHC:E TR MT29F1G16ABBEAHC:E TR MT29F1G16ABBEAHC:E TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Memory - CAT28F020H-90 - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category Flash; Flash
Access Time 90 ns
Density 2000 kbits
View Details
Memory - IS29GL512S-11DHV01 - Lingto Electronic Limited
Infineon Technologies AG
Specs
Memory Category Flash; Flash
Access Time 110 ns
Density 512000 kbits
View Details
2 suppliers
SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
Memory - AS5LC1008 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category SRAM; SRAM Chip
Access Time 10 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details