Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAH4-AITX:E TR

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Description
IC FLASH 1GBIT PARALLEL 63VFBGA

Suppliers

Company
Product
Description
Supplier Links
Integrated Circuits (ICs) - Memory - Memory - MT29F1G16ABBEAH4-AITX:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G16ABBEAH4-AITX:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G16ABBEAH4-AITX:E TR
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site
FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND Memory IC 1Gbit Parallel 63-VFBGA (9x11)

Buy Now

Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G16ABBEAH4-AITX:E TR MT29F1G16ABBEAH4-AITX:E TR MT29F1G16ABBEAH4-AITX:E TR
Product Name Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash; Non-Volatile Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 2385263 - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
Flash Memory - 1882785P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Package Type VFBGA
Pins 63
View Details
Memory - 24C01-I - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category EEPROM; EEPROM
Access Time 900 ns
Density 1 kbits
View Details