Micron Technology, Inc. Memory MT29F1G08ABAFAM78A3WC1

Description
IC FLASH 1GBIT PARALLEL WAFER
  • Memory - MT29F1G08ABAFAM78A3WC1 - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F1G08ABAFAM78A3WC1 - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Datasheet
Description
IC FLASH 1GBIT PARALLEL WAFER
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F1G08ABAFAM78A3WC1 - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F1G08ABAFAM78A3WC1
Memory MT29F1G08ABAFAM78A3WC1
IC FLASH 1GBIT PARALLEL WAFER

IC FLASH 1GBIT PARALLEL WAFER

Supplier's Site Datasheet
Memory - MT29F1G08ABAFAM78A3WC1 - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F1G08ABAFAM78A3WC1
Memory MT29F1G08ABAFAM78A3WC1
FLASH - NAND Memory IC 1Gbit Parallel Die

FLASH - NAND Memory IC 1Gbit Parallel Die

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F1G08ABAFAM78A3WC1 MT29F1G08ABAFAM78A3WC1
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 16-3459-02 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
16-3459-02
View Details
2 suppliers
Memory - 0436A8ACLAA-4H - Lingto Electronic Limited
Rochester Electronics
Memory
0436A8ACLAA-4H
Specs
Memory Category SRAM; SRAM Chip
Access Time 4.5 ns
Density 8000 kbits
View Details
- LP3913SQ-AA/NOPB - Rochester Electronics
Texas Instruments
LP3913SQ-AA/NOPB
Specs
Memory Category Flash
Package Type WQFN48
View Details
Flash Memory - 1882828P - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882828P
Specs
Memory Category Flash
Density 64000 kbits
Package Type USON
View Details