Micron Technology, Inc. Memory MT29F1G08ABAFAH4-AATES:F

Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Datasheet
Description
IC FLASH 1GBIT PARALLEL 63VFBGA
Datasheet

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IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

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FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)

FLASH - NAND (SLC) Memory IC 1Gbit Parallel 63-VFBGA (9x11)

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Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABAFAH4-AATES:F - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABAFAH4-AATES:F
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABAFAH4-AATES:F
IC FLASH 1GBIT PARALLEL 63VFBGA

IC FLASH 1GBIT PARALLEL 63VFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F1G08ABAFAH4-AATES:F MT29F1G08ABAFAH4-AATES:F MT29F1G08ABAFAH4-AATES:F
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 1000000 kbits 1000000 kbits 1000000 kbits
Operating Temperature -40 to 105 C (-40 to 221 F)
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