Micron Technology, Inc. Memory - Flash - MT29F1G08ABAEAWP-IT:E TR MT29F1G08ABAEAWP-IT:E TR

Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
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Description
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABAEAWP-IT:E TR -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABAEAWP-IT:E TR
Memory - Flash - MT29F1G08ABAEAWP-IT:E TR
Manufacturer: Micron Technology Inc. Packaging: Reel - TR Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Categories: Integrated Circuits Status: Active Temperature Range - Operating: -40°C to 85°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Popularity: Medium Fake Threat In the Open Market: 33 pct. Supply and Demand Status: Limited

Manufacturer: Micron Technology Inc.
Packaging: Reel - TR
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: -40°C to 85°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Popularity: Medium
Fake Threat In the Open Market: 33 pct.
Supply and Demand Status: Limited

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Memory IC and Storage Component - 774-MT29F1G08ABAEAWP-IT:E TR - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F1G08ABAEAWP-IT:E TR
Memory IC and Storage Component 774-MT29F1G08ABAEAWP-IT:E TR
IC FLASH 1GBIT PARALLEL 48TSOP I Product overview: MT29F1G08ABAEAWP-IT: E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABAEAWP -IT:E TR can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 48TSOP I Product overview: MT29F1G08ABAEAWP-IT:E TR from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABAEAWP-IT:E TR can be used for catalog matching and distributor lookup.

Supplier's Site Datasheet
FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I

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Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABAEAWP-IT:E TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABAEAWP-IT:E TR
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABAEAWP-IT:E TR
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F1G08ABAEAWP-IT:E TR MT29F1G08ABAEAWP-IT:E TR MT29F1G08ABAEAWP-IT:E TR MT29F1G08ABAEAWP-IT:E TR
Product Name Memory - Flash - MT29F1G08ABAEAWP-IT:E TR Memory IC and Storage Component Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Package Type SOP; 48-TSOP Tape & Reel (TR) 48-TFSOP (0.724\", 18.40mm Width)
Supply Voltage 2.7 V ~ 3.6 V -3.3V; 3.6V; 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V Surface Mount
Endurance 100000 Write/Erase Cycles
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