Micron Technology, Inc. Memory - Flash - MT29F1G08ABAEAWP:E MT29F1G08ABAEAWP:E

Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABAEA Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): S34ML01G100TFI003; S34ML01G100TFI010; S34ML01G100TFI013; S34ML01G100TFI000; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Malaysia, Singapore Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
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Description
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABAEA Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): S34ML01G100TFI003; S34ML01G100TFI010; S34ML01G100TFI013; S34ML01G100TFI000; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Malaysia, Singapore Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - Flash - MT29F1G08ABAEAWP:E -  - Win Source Electronics
Laguna Hills, CA, United States
Memory - Flash - MT29F1G08ABAEAWP:E
Memory - Flash - MT29F1G08ABAEAWP:E
Manufacturer: Micron Technology Inc. Packaging: Bulk Mounting: SMD (SMT) Technology: FLASH - NAND Memory Size: 1Gb (128M x 8) Family Name: MT29F1G08ABAEA Categories: Integrated Circuits Status: Active Temperature Range - Operating: 0°C to 70°C (TA) Case / Package: 48-TSOP Supply Voltage - Operating: 2.7 V to 3.6 V Memory Format: FLASH Alternative Parts (Cross-Reference): S34ML01G100TFI003; S34ML01G100TFI010; S34ML01G100TFI013; S34ML01G100TFI000; Introduction Date: January 01, 2000 ECCN: 3A991.b.1.a Country of Origin: Malaysia, Singapore Estimated EOL Date: 2029 Is this a common-used part?: Yes Popularity: High Fake Threat In the Open Market: 46 pct. Supply and Demand Status: Sufficient

Manufacturer: Micron Technology Inc.
Packaging: Bulk
Mounting: SMD (SMT)
Technology: FLASH - NAND
Memory Size: 1Gb (128M x 8)
Family Name: MT29F1G08ABAEA
Categories: Integrated Circuits
Status: Active
Temperature Range - Operating: 0°C to 70°C (TA)
Case / Package: 48-TSOP
Supply Voltage - Operating: 2.7 V to 3.6 V
Memory Format: FLASH
Alternative Parts (Cross-Reference): S34ML01G100TFI003; S34ML01G100TFI010; S34ML01G100TFI013; S34ML01G100TFI000;
Introduction Date: January 01, 2000
ECCN: 3A991.b.1.a
Country of Origin: Malaysia, Singapore
Estimated EOL Date: 2029
Is this a common-used part?: Yes
Popularity: High
Fake Threat In the Open Market: 46 pct.
Supply and Demand Status: Sufficient

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Memory IC and Storage Component - 774-MT29F1G08ABAEAWP:E - ERSAELECTRONICS PTE. LTD.
Singapore
Memory IC and Storage Component
774-MT29F1G08ABAEAWP:E
Memory IC and Storage Component 774-MT29F1G08ABAEAWP:E
IC FLASH 1GBIT PARALLEL 48TSOP I Product overview: MT29F1G08ABAEAWP:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABAEAWP :E can be used for catalog matching and distributor lookup.

IC FLASH 1GBIT PARALLEL 48TSOP I Product overview: MT29F1G08ABAEAWP:E from Micron Technology is a Memory IC and Storage Component for data storage, firmware boot, embedded logging, industrial controllers, computing modules, and replacement sourcing. It is useful for engineers and buyers comparing datasheets, replacement parts, BOM lines, package options, lifecycle status, and procurement availability. Key searchable attributes include key electrical ratings, package details, and application requirements. Search-friendly keywords include memory IC, Flash, SRAM, DRAM, storage module, Memory IC and Storage Component, Memory ICs Products. This listing supports clearer product discovery for industrial, commercial, repair, automation, power, sensing, and embedded system projects. Product number 774-MT29F1G08ABAEAWP:E can be used for catalog matching and distributor lookup.

Supplier's Site
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron - 80AH7661 - Newark, An Avnet Company
Chicago, IL, United States
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron
80AH7661
Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron 80AH7661
FLASH MEMORY, 1GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:TSOP-I; No. of Pins:48Pins; Clock Frequency:50MHz RoHS Compliant: Yes

FLASH MEMORY, 1GBIT, 0 TO 70DEG C; Flash Memory Type:SLC NAND; Memory Size:1Gbit; Flash Memory Configuration:128M x 8bit; IC Interface Type:Parallel; Memory Case Style:TSOP-I; No. of Pins:48Pins; Clock Frequency:50MHz RoHS Compliant: Yes

Supplier's Site Datasheet
Memory - MT29F1G08ABAEAWP:E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 1Gbit Parallel 48-TSOP I

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F1G08ABAEAWP:E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F1G08ABAEAWP:E
Integrated Circuits (ICs) - Memory - Memory MT29F1G08ABAEAWP:E
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site
IC FLASH 1GBIT PARALLEL 48TSOP I

IC FLASH 1GBIT PARALLEL 48TSOP I

Supplier's Site Datasheet

Technical Specifications

  Win Source Electronics ERSAELECTRONICS PTE. LTD. ODG (Origin Data Global) Newark, An Avnet Company Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips Memory Chips
Product Number 774-MT29F1G08ABAEAWP:E MT29F1G08ABAEAWP:E 80AH7661 MT29F1G08ABAEAWP:E MT29F1G08ABAEAWP:E MT29F1G08ABAEAWP:E
Product Name Memory - Flash - MT29F1G08ABAEAWP:E Memory IC and Storage Component Memory Flash Memory, 1Gbit, 0 To 70Deg C; Flash Memory Type Micron Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; FLASH - NAND Flash Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F) 0 to 70 C (32 to 158 F)
Package Type SOP; 48-TSOP Tray 48-TFSOP (0.724", 18.40mm Width) TSOP-I 48-TFSOP (0.724\", 18.40mm Width)
Supply Voltage 2.7 V ~ 3.6 V -3.3V; 3.6V; 2.7V ~ 3.6V 2.7V ~ 3.6V 3.6V; 2.7V ~ 3.6V Surface Mount
Endurance 100000 Write/Erase Cycles
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