Micron Technology, Inc. Memory MT29F16G08CBECBL72A3WC1P TR

Description
FLASH - NAND Memory IC 16Gbit Parallel Die
  • Memory - MT29F16G08CBECBL72A3WC1P TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29F16G08CBECBL72A3WC1P TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND Memory IC 16Gbit Parallel Die

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F16G08CBECBL72A3WC1P TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F16G08CBECBL72A3WC1P TR
Memory MT29F16G08CBECBL72A3WC1P TR
FLASH - NAND Memory IC 16Gbit Parallel Die

FLASH - NAND Memory IC 16Gbit Parallel Die

Buy Now
Memory - MT29F16G08CBECBL72A3WC1P TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F16G08CBECBL72A3WC1P TR
Memory MT29F16G08CBECBL72A3WC1P TR
IC FLASH 16GBIT PARALLEL WAFER

IC FLASH 16GBIT PARALLEL WAFER

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29F16G08CBECBL72A3WC1P TR MT29F16G08CBECBL72A3WC1P TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882567 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882567
Specs
Memory Category Flash
Access Time 25000 ns
Number of Words 1024 k
View Details
Memory - EEPROM - NM27C040Q200 - 1191208-NM27C040Q200 - Win Source Electronics
Texas Instruments
Memory - EEPROM - NM27C040Q200
NM27C040Q200
View Details
2 suppliers
Memory - 0418A4ACLAA-5 - Lingto Electronic Limited
Rochester Electronics
Memory
0418A4ACLAA-5
Specs
Memory Category SRAM; SRAM Chip
Access Time 5 ns
Density 4000 kbits
View Details
Memory - 448-S25FL064LABMFI003TR-ND - DigiKey
Infineon Technologies AG
Memory
S25FL064LABMFI003
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits
View Details
5 suppliers