Micron Technology, Inc. Memory MT29F128G08EBEBBWP:B TR

Description
IC FLASH 128GBIT PAR 48TSOP I
  • Memory - MT29F128G08EBEBBWP:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29F128G08EBEBBWP:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 128GBIT PAR 48TSOP I

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29F128G08EBEBBWP:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29F128G08EBEBBWP:B TR
Memory MT29F128G08EBEBBWP:B TR
IC FLASH 128GBIT PAR 48TSOP I

IC FLASH 128GBIT PAR 48TSOP I

Supplier's Site
Memory - MT29F128G08EBEBBWP:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29F128G08EBEBBWP:B TR
Memory MT29F128G08EBEBBWP:B TR
FLASH - NAND Memory IC 128Gbit Parallel 48-TSOP I

FLASH - NAND Memory IC 128Gbit Parallel 48-TSOP I

Buy Now

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number MT29F128G08EBEBBWP:B TR MT29F128G08EBEBBWP:B TR
Product Name Memory Memory
Memory Category Flash; Flash Flash; FLASH
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 9338PCQR - Quarktwin Technology Ltd.
Texas Instruments
Memory
9338PCQR
Specs
Operating Temperature 0 to 70 C (32 to 158 F)
Package Type DIP; 16-DIP (0.300\", 7.62mm)
Supply Voltage 4.75V ~ 5.25V
View Details
Memory - 51-29093Z01-A - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
51-29093Z01-A
View Details
Memory - AS8E128K32 - Micross Components, Inc.
Micross Components, Inc.
Memory
AS8E128K32
Specs
Memory Category EEPROM; EEPROM
Access Time 250 to 300 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Memory - 3288H4549-1 - Lingto Electronic Limited
Rochester Electronics
Memory
3288H4549-1
View Details