Micron Technology, Inc. Memory MT29F128G08CECABH1-10Z:A TR

Description
FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 100-VBGA (12x18)
Description
FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 100-VBGA (12x18)

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FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 100-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 100 MHz 100-VBGA (12x18)

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Integrated Circuits (ICs) - Memory - Memory - MT29F128G08CECABH1-10Z:A TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08CECABH1-10Z:A TR
Integrated Circuits (ICs) - Memory - Memory MT29F128G08CECABH1-10Z:A TR
IC FLASH 128GBIT PAR 100VBGA

IC FLASH 128GBIT PAR 100VBGA

Supplier's Site
IC FLASH 128GBIT PAR 100VBGA

IC FLASH 128GBIT PAR 100VBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08CECABH1-10Z:A TR MT29F128G08CECABH1-10Z:A TR MT29F128G08CECABH1-10Z:A TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Operating Temperature 0 to 70 C (32 to 158 F)
Density 128000000 kbits 128000000 kbits 128000000 kbits
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