Micron Technology, Inc. Memory MT29F128G08CBCEBJ4-37ES:E

Description
IC FLASH 128GBIT PAR 132VBGA
Datasheet
Description
IC FLASH 128GBIT PAR 132VBGA
Datasheet

Suppliers

Company
Product
Description
Supplier Links
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site Datasheet
FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

FLASH - NAND Memory IC 128Gbit Parallel 267 MHz 132-VBGA (12x18)

Buy Now
Integrated Circuits (ICs) - Memory - Memory - MT29F128G08CBCEBJ4-37ES:E - Acme Chip Technology Co., Limited
Shenzhen, China
Integrated Circuits (ICs) - Memory - Memory
MT29F128G08CBCEBJ4-37ES:E
Integrated Circuits (ICs) - Memory - Memory MT29F128G08CBCEBJ4-37ES:E
IC FLASH 128GBIT PAR 132VBGA

IC FLASH 128GBIT PAR 132VBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Acme Chip Technology Co., Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29F128G08CBCEBJ4-37ES:E MT29F128G08CBCEBJ4-37ES:E MT29F128G08CBCEBJ4-37ES:E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Density 128000000 kbits 128000000 kbits 128000000 kbits
Operating Temperature 0 to 70 C (32 to 158 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - JM38510/23102BFA - Quarktwin Technology Ltd.
View Details
2 suppliers
SDRAM - 1882676P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category DRAM Chip
Access Time 5 ns
Density 4096000 kbits
View Details
Quad Memory IC and Storage Component - 774-S25FL116K0XNFI010 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash; Non-Volatile
Cycle Time 3.00E6 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
4 suppliers
Memory - 71024S20TYGI - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category SRAM; SRAM Chip
Access Time 20 ns
Density 1000 kbits
View Details