Micron Technology, Inc. Memory MT29E6T08ETHBBM5-3ES:B TR

Description
IC FLASH 6TB PARALLEL 333MHZ
  • Memory - MT29E6T08ETHBBM5-3ES:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
  • Memory - MT29E6T08ETHBBM5-3ES:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
IC FLASH 6TB PARALLEL 333MHZ

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29E6T08ETHBBM5-3ES:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29E6T08ETHBBM5-3ES:B TR
Memory MT29E6T08ETHBBM5-3ES:B TR
IC FLASH 6TB PARALLEL 333MHZ

IC FLASH 6TB PARALLEL 333MHZ

Supplier's Site
Memory - MT29E6T08ETHBBM5-3ES:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29E6T08ETHBBM5-3ES:B TR
Memory MT29E6T08ETHBBM5-3ES:B TR
FLASH - NAND Memory IC 6Tbit Parallel 333 MHz

FLASH - NAND Memory IC 6Tbit Parallel 333 MHz

Buy Now
Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29E6T08ETHBBM5-3ES:B TR
Integrated Circuits (ICs) - Memory - Memory MT29E6T08ETHBBM5-3ES:B TR
IC FLASH 6TBIT PARALLEL 333MHZ

IC FLASH 6TBIT PARALLEL 333MHZ

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29E6T08ETHBBM5-3ES:B TR MT29E6T08ETHBBM5-3ES:B TR MT29E6T08ETHBBM5-3ES:B TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
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