Micron Technology, Inc. Memory MT29E512G08CKCBBH7-6:B TR

Description
FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA
  • Memory - MT29E512G08CKCBBH7-6:B TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
  • Memory - MT29E512G08CKCBBH7-6:B TR - Lingto Electronic Limited
    Lingto Electronic Limited
Description
FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29E512G08CKCBBH7-6:B TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29E512G08CKCBBH7-6:B TR
Memory MT29E512G08CKCBBH7-6:B TR
FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA

FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA

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Memory - MT29E512G08CKCBBH7-6:B TR - Lingto Electronic Limited
Lingto Electronic Limited
Shenzhen, China
Memory
MT29E512G08CKCBBH7-6:B TR
Memory MT29E512G08CKCBBH7-6:B TR
IC FLASH 512GBIT PAR 152TBGA

IC FLASH 512GBIT PAR 152TBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number MT29E512G08CKCBBH7-6:B TR MT29E512G08CKCBBH7-6:B TR
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
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2 suppliers