Micron Technology, Inc. Memory MT29E512G08CKCBBH7-6:B TR

Description

FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA

Quarktwin Technology Ltd.
Lingto Electronic Limited

Description

FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA

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Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
MT29E512G08CKCBBH7-6:B TR

Memory MT29E512G08CKCBBH7-6:B TR

FLASH - NAND Memory IC 512Gbit Parallel 167 MHz 152-TBGA

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Lingto Electronic Limited

Shenzhen, China

Memory
MT29E512G08CKCBBH7-6:B TR

Memory MT29E512G08CKCBBH7-6:B TR

IC FLASH 512GBIT PAR 152TBGA

Supplier's Site

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	MT29E512G08CKCBBH7-6:B TR	MT29E512G08CKCBBH7-6:B TR
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash

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