Micron Technology, Inc. Memory MT29E3T08EQHBBG2-3ES:B

Description

FLASH - NAND Memory IC 3Tbit Parallel 333 MHz 272-LFBGA (14x18)

Quarktwin Technology Ltd.
Lingto Electronic Limited

Datasheet

Description

FLASH - NAND Memory IC 3Tbit Parallel 333 MHz 272-LFBGA (14x18)

Datasheet

Suppliers

Company

Product

Description

Supplier Links

Quarktwin Technology Ltd.

Shenzhen, Guangdong, China

Memory
MT29E3T08EQHBBG2-3ES:B

Memory MT29E3T08EQHBBG2-3ES:B

FLASH - NAND Memory IC 3Tbit Parallel 333 MHz 272-LFBGA (14x18)

Buy Now

Lingto Electronic Limited

Shenzhen, China

Memory
MT29E3T08EQHBBG2-3ES:B

Memory MT29E3T08EQHBBG2-3ES:B

IC FLASH 3TB PARALLEL 333MHZ

Supplier's Site

Datasheet

Technical Specifications

	Quarktwin Technology Ltd.	Lingto Electronic Limited
Product Category	Memory Chips	Memory Chips
Product Number	MT29E3T08EQHBBG2-3ES:B	MT29E3T08EQHBBG2-3ES:B
Product Name	Memory	Memory
Memory Category	Flash; FLASH	Flash; Flash

Unlock Full Specs

to access all available technical data

Similar Products

Micross Components, Inc.

Memory

AS29LV016J

Specs

Memory Category FLASH

Access Time 50 ns

Operating Temperature -55 to 125 C (-67 to 257 F)

View Details

Texas Instruments

Controllers

BQ2204ASN-N

Specs

Operating Temperature -40 to 85 C (-40 to 185 F)

Package Type SOIC; 16-SOIC (0.154\", 3.90mm Width)

Supply Voltage 4.5V ~ 5.5V

View Details

Rochester Electronics

Memory

27C16Q55/B

Specs

Memory Category EPROM

Package Type DIP; CDIP

View Details

4 suppliers

RS Components, Ltd.

SmartMedia Cards

2651136

Specs

Memory Category Flash

View Details