Micron Technology, Inc. Memory MT29C4G96MAYBACKD-5 WT TR

Description
FLASH - NAND, Mobile LPDRAM Memory IC 4Gbit (NAND), 4Gbit (LPDRAM) Parallel 200 MHz 137-TFBGA (10.5x13)
Datasheet
Description
FLASH - NAND, Mobile LPDRAM Memory IC 4Gbit (NAND), 4Gbit (LPDRAM) Parallel 200 MHz 137-TFBGA (10.5x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
FLASH - NAND, Mobile LPDRAM Memory IC 4Gbit (NAND), 4Gbit (LPDRAM) Parallel 200 MHz 137-TFBGA (10.5x13)

FLASH - NAND, Mobile LPDRAM Memory IC 4Gbit (NAND), 4Gbit (LPDRAM) Parallel 200 MHz 137-TFBGA (10.5x13)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29C4G96MAYBACKD-5 WT TR
Integrated Circuits (ICs) - Memory - Memory MT29C4G96MAYBACKD-5 WT TR
IC FLASH RAM 4GBIT PAR 137TFBGA

IC FLASH RAM 4GBIT PAR 137TFBGA

Supplier's Site
IC FLASH RAM 4GBIT PAR 137TFBGA

IC FLASH RAM 4GBIT PAR 137TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29C4G96MAYBACKD-5 WT TR MT29C4G96MAYBACKD-5 WT TR MT29C4G96MAYBACKD-5 WT TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH, RAM Flash; Non-Volatile, Volatile Flash; FLASH, RAM
Unlock Full Specs
to access all available technical data

Similar Products

Memory IC and Storage Component - 774-HPA01220DBZR - ERSAELECTRONICS PTE. LTD.
Specs
Operating Temperature -20 C (-4 F)
Density 1 kbits
Pins 3
View Details
5 suppliers
Memory - A2C00063229 A - Quarktwin Technology Ltd.
Infineon Technologies AG
View Details
2 suppliers
Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details