Micron Technology, Inc. Memory MT29C1G12MAAJAFAMD-6 IT

Description
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)
Description
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)

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FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)

FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)

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Integrated Circuits (ICs) - Memory - Memory - MT29C1G12MAAJAFAMD-6 IT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29C1G12MAAJAFAMD-6 IT
Integrated Circuits (ICs) - Memory - Memory MT29C1G12MAAJAFAMD-6 IT
IC FLASH RAM 1GBIT PAR 130VFBGA

IC FLASH RAM 1GBIT PAR 130VFBGA

Supplier's Site
IC FLASH RAM 1GBIT PAR 130VFBGA

IC FLASH RAM 1GBIT PAR 130VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29C1G12MAAJAFAMD-6 IT MT29C1G12MAAJAFAMD-6 IT MT29C1G12MAAJAFAMD-6 IT
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH, RAM Flash; Non-Volatile, Volatile Flash; FLASH, RAM
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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