Micron Technology, Inc. Memory MT29C1G12MAAJAFAMD-6 IT

Description
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)
Description
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)

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FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)

FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 166 MHz 130-VFBGA (8x9)

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IC FLASH RAM 1GBIT PAR 130VFBGA

IC FLASH RAM 1GBIT PAR 130VFBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - MT29C1G12MAAJAFAMD-6 IT - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
MT29C1G12MAAJAFAMD-6 IT
Integrated Circuits (ICs) - Memory - Memory MT29C1G12MAAJAFAMD-6 IT
IC FLASH RAM 1GBIT PAR 130VFBGA

IC FLASH RAM 1GBIT PAR 130VFBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number MT29C1G12MAAJAFAMD-6 IT MT29C1G12MAAJAFAMD-6 IT MT29C1G12MAAJAFAMD-6 IT
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH, RAM Flash; FLASH, RAM Flash; Non-Volatile, Volatile
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 1000000 kbits 1000000 kbits 1000000 kbits
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