Micron Technology, Inc. Memory MT29C1G12MAADVAMD-5 E IT TR

Description
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 200 MHz 130-VFBGA (8x9)
  • Memory - MT29C1G12MAADVAMD-5 E IT TR - Quarktwin Technology Ltd.
    Quarktwin Technology Ltd.
Description
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 200 MHz 130-VFBGA (8x9)

Suppliers

Company
Product
Description
Supplier Links
Memory - MT29C1G12MAADVAMD-5 E IT TR - Quarktwin Technology Ltd.
Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
Memory
MT29C1G12MAADVAMD-5 E IT TR
Memory MT29C1G12MAADVAMD-5 E IT TR
FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 200 MHz 130-VFBGA (8x9)

FLASH - NAND, Mobile LPDRAM Memory IC 1Gbit (NAND), 512Mbit (LPDRAM) Parallel 200 MHz 130-VFBGA (8x9)

Buy Now

Technical Specifications

  Quarktwin Technology Ltd.
Product Category Memory Chips
Product Number MT29C1G12MAADVAMD-5 E IT TR
Product Name Memory
Memory Category Flash; FLASH, RAM
Unlock Full Specs
to access all available technical data

Similar Products

Memory - SMJ44C256 - Micross Components, Inc.
Micross Components, Inc.
Memory
SMJ44C256
Specs
Memory Category DRAM; DRAM Chip
Access Time 80 to 150 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882517 - RS Components, Ltd.
RS Components, Ltd.
Flash Memory
1882517
Specs
Memory Category Flash
Bits per Word 8 bits
Pins 8
View Details
Memory - EEPROM - NM27LV010T300 - 1082494-NM27LV010T300 - Win Source Electronics
Texas Instruments
Memory - EEPROM - NM27LV010T300
NM27LV010T300
View Details
2 suppliers
Memory - IS29GL256S-10TFV02 - Quarktwin Technology Ltd.
Infineon Technologies AG
Memory
IS29GL256S-10TFV02
Specs
Memory Category Flash; FLASH
Access Time 100 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
View Details
2 suppliers