IC FLASH 1GBIT PARALLEL 56TSOP
IC FLASH 1GBIT PARALLEL 56TSOP Product overview: MT28EW01GABA1HJS-0AA
IC FLASH 1GBIT PARALLEL 56TSOP
IC FLASH 1GBIT PARALLEL 56TSOP
FLASH - NOR Memory IC 1Gb (128M x 8, 64M x 16) Parallel 105ns 56-TSOP
IC FLASH 1GBIT PARALLEL 56TSOP
FLASH - NOR Memory IC 1Gbit Parallel 105 ns 56-TSOP
IC FLASH 1GBIT PARALLEL 56TSOP
| ODG (Origin Data Global) | ERSAELECTRONICS PTE. LTD. | DigiKey | Shenzhen Shengyu Electronics Technology Limited | Quarktwin Technology Ltd. | Lingto Electronic Limited | |
|---|---|---|---|---|---|---|
| Product Category | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips | Memory Chips |
| Product Number | MT28EW01GABA1HJS-0AAT TR | 774-MT28EW01GABA1HJS-0AAT TR | 557-MT28EW01GABA1HJS-0AATTRDKR-ND | MT28EW01GABA1HJS-0AAT TR | MT28EW01GABA1HJS-0AAT TR | MT28EW01GABA1HJS-0AAT TR |
| Product Name | Memory | Memory IC and Storage Component | Memory | Integrated Circuits (ICs) - Memory - Memory | Memory | Memory |
| Memory Category | Flash; FLASH - NOR | Flash; Non-Volatile | Flash | Flash; Non-Volatile | Flash; FLASH | Flash; Flash |
| Access Time | 105 ns | 105 ns | 105 ns | 105 ns | ||
| Operating Temperature | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | -40 to 105 C (-40 to 221 F) | ||
| Density | 1000000 kbits | 1000000 kbits | 1000000 kbits | 1000000 kbits |