Micron Technology, Inc. Memory M58LT256JSB8ZA6F TR

Description
FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 85 ns 80-LBGA (10x12)
Description
FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 85 ns 80-LBGA (10x12)

Suppliers

Company
Product
Description
Supplier Links
Memory - M58LT256JSB8ZA6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 85 ns 80-LBGA (10x12)

FLASH - NOR Memory IC 256Mbit Parallel 52 MHz 85 ns 80-LBGA (10x12)

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IC FLASH 256MBIT PARALLEL 80LBGA

IC FLASH 256MBIT PARALLEL 80LBGA

Supplier's Site
Integrated Circuits (ICs) - Memory - Memory - M58LT256JSB8ZA6F TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58LT256JSB8ZA6F TR
Integrated Circuits (ICs) - Memory - Memory M58LT256JSB8ZA6F TR
IC FLASH 256MBIT PARALLEL 80LBGA

IC FLASH 256MBIT PARALLEL 80LBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58LT256JSB8ZA6F TR M58LT256JSB8ZA6F TR M58LT256JSB8ZA6F TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 85 ns 85 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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