Micron Technology, Inc. Memory M58LR128KT85ZB5F TR

Description
FLASH - NOR Memory IC 128Mbit Parallel 66 MHz 85 ns 56-VFBGA (7.7x9)
Datasheet
Description
FLASH - NOR Memory IC 128Mbit Parallel 66 MHz 85 ns 56-VFBGA (7.7x9)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M58LR128KT85ZB5F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 66 MHz 85 ns 56-VFBGA (7.7x9)

FLASH - NOR Memory IC 128Mbit Parallel 66 MHz 85 ns 56-VFBGA (7.7x9)

Buy Now Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M58LR128KT85ZB5F TR
Integrated Circuits (ICs) - Memory - Memory M58LR128KT85ZB5F TR
IC FLASH 128MBIT PAR 56VFBGA

IC FLASH 128MBIT PAR 56VFBGA

Supplier's Site
IC FLASH 128MBIT PAR 56VFBGA

IC FLASH 128MBIT PAR 56VFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M58LR128KT85ZB5F TR M58LR128KT85ZB5F TR M58LR128KT85ZB5F TR
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 85 ns 85 ns
Operating Temperature -30 to 85 C (-22 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
Unlock Full Specs
to access all available technical data

Similar Products

Flash Memory - 1882745 - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Number of Words 512 k
Bits per Word 8 bits
View Details
Memory - RAM - MT5C1009CW70L883C - 1219688-MT5C1009CW70L883C - Win Source Electronics
Specs
Memory Category SRAM Chip
Operating Temperature -55 C (-67 F)
Density 1000 kbits
View Details
2 suppliers
IC 8 BIT A/D MOD FLASH 20-SOIC - 815-TLC0820AIDW - Utmel Electronic Limited
Specs
Memory Category Flash
Operating Temperature -40 to 85 C (-40 to 185 F)
Package Type SOIC; 20-SOIC (0.295, 7.50mm Width)
View Details
Quad Memory IC and Storage Component - 774-S25FL064LABNFV013 - ERSAELECTRONICS PTE. LTD.
Specs
Memory Category Flash
Access Time 8 ns
Endurance 100000 Write/Erase Cycles
View Details
4 suppliers