Micron Technology, Inc. Integrated Circuits (ICs) - Memory - Memory M29W800DT70ZM6E

Description
IC FLASH 8MBIT PARALLEL TFBGA
Description
IC FLASH 8MBIT PARALLEL TFBGA
Datasheet
Datasheet Summary
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The M29W800DT70ZM6E is an 8-Mbit NOR flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V and features access times of 70 ns. The memory is organized as 1 Mbit x 8 or 512 Kbits x 16, including 19 memory blocks with one boot block and 16 main blocks. It supports embedded byte/word programming algorithms and has a typical programming time of 10 Oºs per byte/word. The device includes erase suspend and resume modes, allowing for read and program operations on another block during an erase suspend. It also features a 64-bit security code and supports 100,000 program/erase cycles per block, making it suitable for applications requiring durability and reliability. The M29W800DT70ZM6E is available in multiple package options, including SO44 and TSOP48, providing flexibility for various design requirements.

Datasheet Summary
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The M29W800DT70ZM6E is an 8-Mbit NOR flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V and features access times of 70 ns. The memory is organized as 1 Mbit x 8 or 512 Kbits x 16, including 19 memory blocks with one boot block and 16 main blocks. It supports embedded byte/word programming algorithms and has a typical programming time of 10 Oºs per byte/word. The device includes erase suspend and resume modes, allowing for read and program operations on another block during an erase suspend. It also features a 64-bit security code and supports 100,000 program/erase cycles per block, making it suitable for applications requiring durability and reliability. The M29W800DT70ZM6E is available in multiple package options, including SO44 and TSOP48, providing flexibility for various design requirements.

Suppliers

Company
Product
Description
Supplier Links
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W800DT70ZM6E
Integrated Circuits (ICs) - Memory - Memory M29W800DT70ZM6E
IC FLASH 8MBIT PARALLEL TFBGA

IC FLASH 8MBIT PARALLEL TFBGA

Supplier's Site
Memory - M29W800DT70ZM6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 8Mbit Parallel 70 ns

FLASH - NOR Memory IC 8Mbit Parallel 70 ns

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Technical Specifications

  Shenzhen Shengyu Electronics Technology Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips
Product Number M29W800DT70ZM6E M29W800DT70ZM6E
Product Name Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; Non-Volatile Flash; FLASH
Cycle Time 70 ns
Density 8000 kbits 8000 kbits
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