Micron Technology, Inc. Memory M29W800DT70ZM6E

The M29W800DT70ZM6E is an 8-Mbit NOR flash memory device from Quarktwin Technology Ltd. It operates with a supply voltage range of 2.7V to 3.6V and features access times of 70 ns. The memory is organized as 1 Mbit x 8 or 512 Kbits x 16, including 19 memory blocks with one boot block and 16 main blocks. It supports embedded byte/word programming algorithms and has a typical programming time of 10 Oºs per byte/word. The device includes erase suspend and resume modes, allowing for read and program operations on another block during an erase suspend. It also features a 64-bit security code and supports 100,000 program/erase cycles per block, making it suitable for applications requiring durability and reliability. The M29W800DT70ZM6E is available in multiple package options, including SO44 and TSOP48, providing flexibility for various design requirements.