Micron Technology, Inc. Memory M29W640GT70ZS6E

Description
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet
Description
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W640GT70ZS6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)

Buy Now Datasheet
IC FLASH 64MBIT PARALLEL 64FBGA

IC FLASH 64MBIT PARALLEL 64FBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited
Product Category Memory Chips Memory Chips
Product Number M29W640GT70ZS6E M29W640GT70ZS6E
Product Name Memory Memory
Memory Category Flash; FLASH Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Unlock Full Specs
to access all available technical data

Similar Products

Memory - 5962-9232404MYA - Lingto Electronic Limited
Rochester Electronics
Specs
Memory Category NVSRAM; SRAM Chip
Access Time 55 ns
Density 64 kbits
View Details
SN74ACT2228 256 x 1 x 2 dual independent synchronous FIFO memories - SN74ACT2228DW - Texas Instruments
Specs
Memory Category FIFO
Package Type SOIC
View Details
5 suppliers
Memory - AS8FLC2M32 - Micross Components, Inc.
Micross Components, Inc.
Specs
Memory Category FLASH
Access Time 70 to 120 ns
Operating Temperature -55 to 125 C (-67 to 257 F)
View Details
Flash Memory - 1882727P - RS Components, Ltd.
RS Components, Ltd.
Specs
Memory Category Flash
Density 2048000 kbits
Package Type WSON
View Details