Micron Technology, Inc. Memory M29W640GL70ZS6E

Description
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet
Description
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W640GL70ZS6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)

FLASH - NOR Memory IC 64Mbit Parallel 70 ns 64-FBGA (11x13)

Buy Now Datasheet
IC FLASH 64MBIT PARALLEL 64FBGA

IC FLASH 64MBIT PARALLEL 64FBGA

Supplier's Site Datasheet
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W640GL70ZS6E
Integrated Circuits (ICs) - Memory - Memory M29W640GL70ZS6E
IC FLASH 64MBIT PARALLEL 64FBGA

IC FLASH 64MBIT PARALLEL 64FBGA

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W640GL70ZS6E M29W640GL70ZS6E M29W640GL70ZS6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits
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