Micron Technology, Inc. Memory M29W064FB6AZA6E

Description
FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-TFBGA (6x8)
Datasheet
Description
FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-TFBGA (6x8)
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29W064FB6AZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-TFBGA (6x8)

FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-TFBGA (6x8)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W064FB6AZA6E
Integrated Circuits (ICs) - Memory - Memory M29W064FB6AZA6E
IC FLASH 64MBIT PARALLEL 48TFBGA

IC FLASH 64MBIT PARALLEL 48TFBGA

Supplier's Site
IC FLASH 64MBIT PARALLEL 48TFBGA

IC FLASH 64MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W064FB6AZA6E M29W064FB6AZA6E M29W064FB6AZA6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 60 ns 60 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 64000 kbits 64000 kbits 64000 kbits
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