Micron Technology, Inc. Memory M29W064FB6AZA6E

Description
IC FLASH 64MBIT PARALLEL 48TFBGA
Datasheet
Description
IC FLASH 64MBIT PARALLEL 48TFBGA
Datasheet

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Product
Description
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IC FLASH 64MBIT PARALLEL 48TFBGA

IC FLASH 64MBIT PARALLEL 48TFBGA

Supplier's Site Datasheet
Memory - M29W064FB6AZA6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-TFBGA (6x8)

FLASH - NOR Memory IC 64Mbit Parallel 60 ns 48-TFBGA (6x8)

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Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29W064FB6AZA6E
Integrated Circuits (ICs) - Memory - Memory M29W064FB6AZA6E
IC FLASH 64MBIT PARALLEL 48TFBGA

IC FLASH 64MBIT PARALLEL 48TFBGA

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29W064FB6AZA6E M29W064FB6AZA6E M29W064FB6AZA6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 60 ns 60 ns
Density 64000 kbits 64000 kbits 64000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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