Micron Technology, Inc. Memory M29F400FB55M32

The M29F400FB55M32 is a 4Mbit parallel NOR flash memory device from Quarktwin Technology Ltd., designed for a supply voltage of 5V. It features an access time of 55ns and supports embedded byte/word programming algorithms, along with erase suspend and resume modes. The memory can endure up to 100,000 program/erase cycles per block, making it suitable for applications requiring durability. This device is available in RoHS-compliant packages, specifically in a 44-lead Small Outline (SO) format. It is rated for automotive applications, with a temperature range of -40¬8C to +125¬8C, and is AEC-Q100 certified. The electronic signature includes a manufacturer code of 0x01h and a device code of 0x22AB for the M29F400FB variant. Engineers considering this memory solution should note its low power consumption characteristics, including standby modes, which can be beneficial for energy-sensitive applications.