Micron Technology, Inc. Memory M29DW256G70NF6F TR

Description
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 56-TSOP
Datasheet
Description
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29DW256G70NF6F TR - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 256Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 256Mbit Parallel 70 ns 56-TSOP

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IC FLASH 256MBIT PARALLEL 56TSOP

IC FLASH 256MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Integrated Circuits (ICs) - Memory - Memory - M29DW256G70NF6F TR - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29DW256G70NF6F TR
Integrated Circuits (ICs) - Memory - Memory M29DW256G70NF6F TR
IC FLASH 256MBIT PARALLEL 56TSOP

IC FLASH 256MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Quarktwin Technology Ltd. Lingto Electronic Limited Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29DW256G70NF6F TR M29DW256G70NF6F TR M29DW256G70NF6F TR
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; FLASH Flash; Flash Flash; Non-Volatile
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 256000 kbits 256000 kbits 256000 kbits
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