Micron Technology, Inc. Memory M29DW128F70NF6E

Description
IC FLASH 128MBIT PARALLEL 56TSOP
Datasheet
Description
IC FLASH 128MBIT PARALLEL 56TSOP
Datasheet

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Product
Description
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IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - M29DW128F70NF6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

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Integrated Circuits (ICs) - Memory - Memory - M29DW128F70NF6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29DW128F70NF6E
Integrated Circuits (ICs) - Memory - Memory M29DW128F70NF6E
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site

Technical Specifications

  Lingto Electronic Limited Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29DW128F70NF6E M29DW128F70NF6E M29DW128F70NF6E
Product Name Memory Memory Integrated Circuits (ICs) - Memory - Memory
Memory Category Flash; Flash Flash; FLASH Flash; Non-Volatile
Access Time 70 ns 70 ns
Density 128000 kbits 128000 kbits 128000 kbits
Operating Temperature -40 to 85 C (-40 to 185 F)
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