Micron Technology, Inc. Memory M29DW128F70NF6E

Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP
Datasheet
Description
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP
Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - M29DW128F70NF6E - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

FLASH - NOR Memory IC 128Mbit Parallel 70 ns 56-TSOP

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Integrated Circuits (ICs) - Memory - Memory - M29DW128F70NF6E - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
M29DW128F70NF6E
Integrated Circuits (ICs) - Memory - Memory M29DW128F70NF6E
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site
IC FLASH 128MBIT PARALLEL 56TSOP

IC FLASH 128MBIT PARALLEL 56TSOP

Supplier's Site Datasheet

Technical Specifications

  Quarktwin Technology Ltd. Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited
Product Category Memory Chips Memory Chips Memory Chips
Product Number M29DW128F70NF6E M29DW128F70NF6E M29DW128F70NF6E
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory
Memory Category Flash; FLASH Flash; Non-Volatile Flash; Flash
Access Time 70 ns 70 ns
Operating Temperature -40 to 85 C (-40 to 185 F)
Density 128000 kbits 128000 kbits 128000 kbits
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