Micron Technology, Inc. Memory JS28F512M29EWH0

Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet
Description
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP
Request a Quote Datasheet

Suppliers

Company
Product
Description
Supplier Links
Memory - JS28F512M29EWH0-ND - DigiKey
Thief River Falls, MN, United States
FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

FLASH - NOR Memory IC 512Mb (64M x 8, 32M x 16) Parallel 110ns 56-TSOP

Buy Now Datasheet
Integrated Circuits (ICs) - Memory - Memory - JS28F512M29EWH0 - Shenzhen Shengyu Electronics Technology Limited
Futian, China
Integrated Circuits (ICs) - Memory - Memory
JS28F512M29EWH0
Integrated Circuits (ICs) - Memory - Memory JS28F512M29EWH0
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site
IC FLASH 512MBIT PARALLEL 56TSOP

IC FLASH 512MBIT PARALLEL 56TSOP

Supplier's Site Datasheet
Memory - JS28F512M29EWH0 - Quarktwin Technology Ltd.
Shenzhen, Guangdong, China
FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

FLASH - NOR Memory IC 512Mbit Parallel 110 ns 56-TSOP

Buy Now Datasheet

Technical Specifications

  DigiKey Shenzhen Shengyu Electronics Technology Limited Lingto Electronic Limited Quarktwin Technology Ltd.
Product Category Memory Chips Memory Chips Memory Chips Memory Chips
Product Number JS28F512M29EWH0-ND JS28F512M29EWH0 JS28F512M29EWH0 JS28F512M29EWH0
Product Name Memory Integrated Circuits (ICs) - Memory - Memory Memory Memory
Memory Category Flash Flash; Non-Volatile Flash; Flash Flash; FLASH
Operating Temperature -40 to 85 C (-40 to 185 F) -40 to 85 C (-40 to 185 F)
Density 512000 kbits 512000 kbits 512000 kbits 512000 kbits
Package Type "56-TFSOP (0.724"", 18.40mm Width)" 56-TFSOP (0.724\", 18.40mm Width)
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